RIBER Secures Major Order for MBE 49 GaN System in Europe

Bezons, France, October 21, 2024 – RIBER has announced the sale of its MBE 49 GaN production system to a European manufacturer. This acquisition aims to boost the customer's capacity in producing advanced gallium nitride (GaN) components. These components are pivotal for next-generation high-brightness and low-energy displays.

The MBE 49 GaN system specializes in Plasma-Assisted GaN epitaxy on 200mm Silicon wafers. It presents a modern solution for manufacturing AlGaN and InGaN devices. RIBER's technology is distinguished by its precise control and efficiency, especially in controlling growth temperature, nanowire formation, and doping processes.

Equipped with the advanced Crystal XE software, the MBE system allows in-situ monitoring to maintain high-quality epitaxial growth. This order emphasizes Europe's growing importance in micro and nanoelectronics innovation. Delivery is scheduled for 2025.