STMicroelectronics Unveils New Silicon Carbide Technology for EV Traction Inverters

STMicroelectronics (NYSE: STM) has announced its fourth-generation STPOWER silicon carbide (SiC) MOSFET technology, designed to set new standards in power efficiency, density, and robustness. This innovation targets automotive and industrial markets, specifically optimizing traction inverters, which are critical for electric vehicle (EV) powertrains. The new SiC technology promises to make smaller and more efficient products available through 2025, including 750V and 1200V classes, thus extending SiC benefits from premium models to mid-sized and compact EVs.

STMicroelectronics plans to continue its advancements in SiC technology, with innovations expected through 2027. The company emphasizes its commitment to electric mobility and industrial efficiency. Marco Cassis, President of the Analog, Power & Discrete, MEMS and Sensors Group at ST, highlighted the company's focus on integrated manufacturing strategies and delivering industry-leading SiC technology performance.

ST’s new Generation 4 SiC MOSFET devices will improve the energy efficiency and performance of 400V and 800V EV bus traction inverters, which could accelerate the adoption of EVs by enabling more affordable car options. These devices are also suited for high-power industrial applications like solar inverters and energy storage solutions, enhancing energy efficiency across various sectors.